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2.4-2.5 GHz Power Amplifier
SST12LP00
SST12LP002.4 GHz Power Amplifier
EOL Data Sheet
FEATURES:
* High Gain: - Typically 28 dB gain across 2.4- 2.5 GHz over temperatures 0- 85C * High linear output power: - >24 dBm P1dB * High power-added efficiency/low operating current for Bluetooth applications - ~50% PAE or 115 mA total current consumption @ Pout = 23 dBm for Vcc = 3.3V and GCTL = 3.0V * Low idle current - ~10 mA ICQ * Simple input/output matching * Packages available - 6-contact VQFN and UQFN (3 x 1.6mm2)
APPLICATIONS:
* Bluetooth * USB Dongles * 2.4 GHz Cordless phones
PRODUCT DESCRIPTION
The SST12LP00 is a high-power and high-gain power amplifier based on the highly reliable InGaP/GaAs HBT technology. SST12LP00 is easily configured for high-power and high-efficiency applications while operating over the 2.4- 2.5 GHz frequency band. This device typically provides 30 dB gain with better than 50% power added efficiency @ Pout = 23 dBm. The SST12LP00's excellent linearity is well suited for Class 1 Bluetooth operation. The power amplifier IC also features easy board-level usage along with high speed power up/down control. A low reference current makes SST12LP00 ideal for the final stage power amplification in battery-powered Bluetooth, USB Dongle, or cordless phone transmitter applications. The SST12LP00 is offered in both 6-contact VQFN and UQFN packages. See Figure 2 for pin assignments and Table 1 for pin descriptions.
(c)2009 Silicon Storage Technology, Inc. S71283-04-EOL 04/09 1
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc. These specifications are subject to change without notice.
2.4-2.5 GHz Power Amplifier SST12LP00
EOL Data Sheet
FUNCTIONAL BLOCKS
Bias/Gain Control
GCTL PDC VCC1 RFIN
1283 B1.1
RFOUT/VCC2
VCCb
FIGURE 1: Functional Block Diagram
PIN ASSIGNMENTS
Top View
(contacts facing down)
RFOUT/VCC2 GCTL PDC 1 2 3 RFIN
RF and DC GND 0
6 5 4 VCC1 VCCb
1283 6-vqfn-uqfn P1.1
FIGURE 2: Pin Assignments for 6-contact VQFN and UQFN
PIN DESCRIPTIONS
TABLE 1: Pin Description
Symbol GND GCTL PDC RFIN VCCb VCC1 RFOUT/VCC2 Pin No. 0 1 2 3 4 5 6 Power Supply Power Supply I PWR PWR O/PWR Pin Name Ground Type1 Function The center pad should be connected to RF ground with several low inductance, low resistance vias. Power Amplifier Gain Control Power-down Control RF input, DC decoupled Vcc power supply, bias circuit Vcc power supply, 1st stage Vcc power supply, 2nd stage
T1.1 1283
1. I=Input, O=Output
(c)2009 Silicon Storage Technology, Inc.
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2.4-2.5 GHz Power Amplifier SST12LP00
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ELECTRICAL SPECIFICATIONS
The AC and DC specifications for the power amplifier interface signals. Refer to Table 2 for the DC voltage and current specifications. Refer to Figure 3 for the RF performance. Absolute Maximum Stress Ratings (Applied conditions greater than those listed under "Absolute Maximum Stress Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.) Supply Voltage at pins 4, 5, and 6 (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +3.6V Power-down Control Voltage (PDC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to VCC Gain Control Voltage (GCTL). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to VCC Radio Frequency Input Power (RFIN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +10 dBm Operating Temperature (TA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40C to +85C Storage Temperature (TSTG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40C to +120C Maximum Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260C for 10 seconds
Operating Range
Range Industrial Ambient Temp -40C to +85C VCC 3.3V
TABLE 2: DC Electrical Characteristics
Symbol VCC ICC GCTL IGCTL PDC ICQ Parameter Supply Voltage at pins 4, 5, and 6 Supply Current @ POUT = 23 dBm Power Amplifier Gain Control Voltage Current through GCTL pin Logic High Voltage Logic Low Voltage Idle Current (GCTL = 3.0V) 10 2.6 0.8 0.1 Min. 2.7 Typ 3.3 115 3.0 55 3.3 100 Max. 3.6 Unit V mA V A V V mA
T2.3 1283
Test Conditions
TABLE 3: AC Electrical Characteristics
Symbol FL-U POUT G GVAR Parameter Frequency range Output power @ PIN = -7 dBm, VCC = 3.3V, GCTL = 3.0V Small signal gain Gain variation over band (2400~2485 MHz) 23 27 0.2 0.5 dBm dB dB
T3.2 1283
Min. 2402
Typ
Max. 2480
Unit MHz
(c)2009 Silicon Storage Technology, Inc.
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2.4-2.5 GHz Power Amplifier SST12LP00
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TYPICAL PERFORMANCE CHARACTERISTICS
0 -5 -10 -15 -20 -25 -30 1.0
0 -10 -20
S11 (dB)
S12 (dB)
-30 -40 -50 -60 -70 -80 1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
Frequency (GHz)
Frequency (GHz)
40 30 20
0 -5 -10
S21 (dB)
0 -10 -20 -30 -40 1.0
S22 (dB)
2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
10
-15 -20 -25 -30 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
Frequency (GHz)
Frequency (GHz)
1283 Sparm1.0
FIGURE 3: S-parameters for SST12LP00
(c)2009 Silicon Storage Technology, Inc.
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2.4-2.5 GHz Power Amplifier SST12LP00
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32 31 30
Power Gain (dB)
29 28 27 26 25 24 23 22 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Freq=2.402 GHz Freq=2.442 GHz Freq=2.480 GHz
Output Power (dBm)
1283 F3.1
FIGURE 4: Power Gain versus Output Power
25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 -18 -17
Freq=2.402 GHz Freq=2.442 GHz Freq=2.480 GHz
Output Power (dBm)
-16
-15
-14
-13
-12
-11
-10
-9
-8
-7
-6
-5
-4
Input Power (dBm)
1283 F4.1
FIGURE 5: Output Power versus Input Power
(c)2009 Silicon Storage Technology, Inc.
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2.4-2.5 GHz Power Amplifier SST12LP00
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140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Freq=2.402 GHz Freq=2.442 GHz Freq=2.480 GHz
Supply Current (mA)
Output Power (dBm)
1283 F5.1
FIGURE 6: Supply Current versus Output Power
58 54 50 46
Freq=2.402 GHz Freq=2.442 GHz Freq=2.480 GHz
PAE (%)
42 38 34 30 26 22 18 14 10
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
Output Power (dBm)
1283 F6.1
FIGURE 7: PAE versus Output Power
(c)2009 Silicon Storage Technology, Inc.
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2.4-2.5 GHz Power Amplifier SST12LP00
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-20 -22 -24 -26 -28 -30 -32 -34 -36 -38 -40 -42 -44 -46 -48 -50 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
2nd Harmonic (dBc)
Freq=2.402 GHz
Freq=2.442 GHz Freq=2.480 GHz
Output Power (dBm)
1283 F7.1
FIGURE 8: 2nd Harmonic versus Output Power
-30 -34 -38 Freq=2.402 GHz Freq=2.442 GHz Freq=2.480 GHz
3rd Harmonic (dBc)
-42 -46 -50 -54 -58 -62 -66 -70 9 10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
Output Power (dBm)
1283 F8.1
FIGURE 9: 3rd Harmonic versus Output Power
(c)2009 Silicon Storage Technology, Inc.
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2.4-2.5 GHz Power Amplifier SST12LP00
EOL Data Sheet
-30 -34 -38 Freq=2.402 GHz Freq=2.442 GHz Freq=2.480 GHz
4th Harmonic (d Bc)
-42 -46 -50 -54 -58 -62 -66 -70 9 10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
Output Power (dBm)
1283 F9.1
FIGURE 10: 4th Harmonic versus Output Power
-30 -34 -38 Freq=2.402 GHz Freq=2.442 GHz Freq=2.480 GHz
5th Harmonic (dBc)
-42 -46 -50 -54 -58 -62 -66 -70 9 10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
Output Power (dBm)
1283 F10.1
FIGURE 11: 5th Harmonic versus Output Power
(c)2009 Silicon Storage Technology, Inc.
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2.4-2.5 GHz Power Amplifier SST12LP00
EOL Data Sheet
-10 -12 -14 -16 -18 -20 Freq=2.412 GHz Freq=2.442 GHz Freq=2.484 GHz
IMD3 (dBc)
-22 -24 -26 -28 -30 -32 -34 -36 -38 -40 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
Output Power (dBm)
1283 F11.1
FIGURE 12: IMD3 versus Output Power
(c)2009 Silicon Storage Technology, Inc.
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2.4-2.5 GHz Power Amplifier SST12LP00
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TYPICAL APPLICATION
50 / 200 mil2 1 pF
22 pF4 RFOUT
2.7 nH3 GCTL PDC 1 2 3 22 pF1 RFIN 3.0 nH1 GND 6 5 4
1.8 pF 0.1 F
3.3 nH VCC
10 F
1283 Schematic.1.1
1. Optional and only necessary for achieving high input return loss. 2. Replaceable by 1 nH (0402) inductor for compactness. 3. Shunt capacitor can be added to the inductor to lower the 2nd harmonic. 4. LC low-pass filter can be added to lower the 2nd harmonic.
FIGURE 13: Typical Application Schematic (Top View)
(c)2009 Silicon Storage Technology, Inc.
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2.4-2.5 GHz Power Amplifier SST12LP00
EOL Data Sheet
PRODUCT ORDERING INFORMATION
SST12LP SST12LP 00 XX - QV6 - XXX E X Environmental Attribute E1 = non-Pb contact (lead) finish F2 = non-Pb/non-Sn contact (lead) finish Package Modifier 6 = 6 contact Package Type QV = VQFN QU = UQFN Product Family Identifier Product Type P = Power Amplifier Voltage L = 3.0-3.6V Frequency of Operation 2 = 2.4 GHz Product Line 1 = SST Communications
1. Environmental suffix "E" denotes non-Pb solder. SST non-Pb solder devices are "RoHS Compliant". 2. Environmental suffix "F" denotes non-Pb/non-SN solder. SST non-Pb/non-Sn solder devices are "RoHS Compliant".
Valid combinations for SST12LP00 SST12LP00-QV6E SST12LP00 Evaluation Kits SST12LP00-QV6E-K SST12LP00-QU6F-K SST12LP00-QU6F
Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales representative to confirm availability of valid combinations and to determine availability of new combinations.
(c)2009 Silicon Storage Technology, Inc.
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2.4-2.5 GHz Power Amplifier SST12LP00
EOL Data Sheet
PACKAGING DIAGRAMS
TOP VIEW
SIDE VIEW
0.2
BOTTOM VIEW
0.475
1
See paddle details
Pin #1 1.60 0.10 0.5 BSC 3.00 0.10 1.00 0.80 0.076 0.05 Max 0.3 0.4
0.25
Exposed Paddle Detail
0.25 0.425
See note 2
Note: 1. Although many dimensions are simliar to those of JEDEC JEP95 MO-220I, this specific package is not registered. 2. The external paddle is electrically connected to the die back-side and possibly to certain VSS leads. This paddle can be soldered to the PC board; it is suggested to connect this paddle to the VSS of the unit. Connection of this paddle to any other voltage potential can result in shorts and/or electrical malfunction of the device. 3. Untoleranced dimensions are nominal target dimensions. 4. All linear dimensions are in millimeters (max/min).
1.25 0.425 0.25 1.80
1mm 6-vqfn-3x1.6-QV6-0.0
FIGURE 14: 6-contact Very-thin Quad Flat No-lead (VQFN) SST Package Code: QV6
(c)2009 Silicon Storage Technology, Inc.
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2.4-2.5 GHz Power Amplifier SST12LP00
EOL Data Sheet
TOP VIEW
SIDE VIEW
0.15
BOTTOM VIEW
0.475
1
See paddle details
Pin #1 1.60 0.10 0.5 BSC 3.00 0.10 0.60 0.50 0.075 0.05 Max 0.3 0.4
0.25
Exposed Paddle Detail
0.25 0.425
See note 2
Note: 1. Although many dimensions are simliar to those of JEDEC JEP95 MO-220I, this specific package is not registered. 2. The external paddle is electrically connected to the die back-side and possibly to certain VSS leads. This paddle can be soldered to the PC board; it is suggested to connect this paddle to the VSS of the unit. Connection of this paddle to any other voltage potential can result in shorts and/or electrical malfunction of the device. 3. Untoleranced dimensions are nominal target dimensions. 4. All linear dimensions are in millimeters (max/min).
1.25 0.425 0.25 1.80
1mm 6-uqfn-3x1.6-QU6-1.0
FIGURE 15: 6-Contact Ultra-thin Quad Flat No-lead (UQFN) SST Package Code: QU6
TABLE 4: Revision History
Revision 00 01 Description Date Jan 2005 Mar 2006
* * * * * * * * * * * * *
S71283: SST conversion of data sheet GP1200 Made various changes to include UQFN package Updated Information in "Features:" on page 1 Updated "Product Description" on page 1 Updated Table 1 on page 2 Updated "Electrical Specifications" on page 3 Updated Table 2 on page 3 Updated Table 3 on page 3 Updated Figure 13 on page 10 Applied new formatting styles. Updated document status from Preliminary Specification to Data Sheet Updated "Contact Information" on page 14. End of Life all valid combinations in this data sheet
02 03 04
Apr 2008 Feb 2009 Apr 2009
(c)2009 Silicon Storage Technology, Inc.
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2.4-2.5 GHz Power Amplifier SST12LP00
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CONTACT INFORMATION Marketing
SST Communications Corp. 5340 Alla Road, Ste. 210 Los Angeles, CA 90066 Tel: 310-577-3600 Fax: 310-577-3605
Sales and Marketing Offices
NORTH AMERICA Silicon Storage Technology, Inc. 1171 Sonora Court Sunnyvale, CA 94086-5308 Tel: 408-735-9110 Fax: 408-735-9036 ASIA PACIFIC NORTH SST Macao Room N, 6th Floor, Macao Finance Center, No. 202A-246, Rua de Pequim, Macau Tel: 853-2870-6022 Fax: 853-2870-6023 ASIA PACIFIC SOUTH SST Communications Co. 16F-6, No. 75, Sec.1, Sintai 5th Rd Sijhih City, Taipei County 22101 Taiwan, R.O.C. Tel: 886-2-8698-1198 Fax: 886-2-8698-1190
EUROPE Silicon Storage Technology Ltd. Mark House 9-11 Queens Road Hersham, Surrey KT12 5LU UK Tel: 44 (0) 1932-238133 Fax: 44 (0) 1932-230567 JAPAN SST Japan NOF Tameike Bldg, 9F 1-1-14 Akasaka, Minato-ku Tokyo, Japan 107-0052 Tel: 81-3-5575-5515 Fax:81-3-5575-5516
KOREA SST Korea 6F, Heungkuk Life Insurance Bldg 6-7 Sunae-Dong, Bundang-Gu, Sungnam-Si Kyungki-Do, Korea, 463-020 Tel: 82-31-715-9138 Fax: 82-31-715-9137
Silicon Storage Technology, Inc. * 1171 Sonora Court * Sunnyvale, CA 94086 * Telephone 408-735-9110 * Fax 408-735-9036 www.SuperFlash.com or www.sst.com
(c)2009 Silicon Storage Technology, Inc. S71283-04-EOL 04/09
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